PVD Sputtering Ion Coating Machine/ Multi-arc Ion Magnetron Sputtering PVD Coater Glass Jewel

It is composed of a pulse power supply module, a magnetron sputtering chamber, a target material assembly, a vacuum system, a substrate transmission and temperature control unit, as well as an online monitoring system, etc.

By outputting a pulse voltage with a frequency ranging from 10 to 350kHz, target sputtering is achieved in the negative voltage stage, and electrons are introduced in the positive voltage stage to neutralize the accumulated positive charges on the target surface. During operation, the chamber is first evacuated to a vacuum and working gases such as argon are introduced. After the pulse power supply applies voltage, the gas is ionized to form plasma. Under the constraint of the magnetic field, the plasma bombards the target material, causing the atoms or molecules of the target material to detach and deposit on the surface of the substrate to form a film.

The equipment can precisely adjust core parameters such as pulse frequency, duty cycle, and peak power, adapting to different target materials and coating requirements. By adjusting the duty cycle, the heat generation of the target material and the sputtering rate can also be balanced. Some high-end models can achieve a pulse frequency of up to 150kHz, which can meet the deposition requirements of complex film layers.

It can not only handle metal targets such as Ti and Al, but also achieve stable sputtering of insulating targets such as Al₂O₃ and TiO₂ through bidirectional pulse or medium-frequency AC modes. Moreover, the low-temperature process design can be adapted to different material substrates such as glass, plastic, and PET, and is particularly suitable for coating heat-sensitive substrates like flexible OLeds.

Mainstream models are equipped with multiple integrated vacuum manipulators, online film thickness monitoring, and automatic alignment systems, supporting continuous production in multiple chambers.

The periodic working mode of the pulse power supply can effectively suppress the arc discharge on the target surface and reduce film defects. At the same time, high-power pulses can generate high-density plasma, making the film layer denser.

The target material utilization rate of the equipment can be increased from 20% to 45%, the target material consumption can be reduced by 40%, and the cost of using rare metals such as ITO can be reduced by 30%. Moreover, the deposition rate can reach 10nm/s, significantly enhancing production efficiency.

During the deposition of oxide, nitride and other compound films, the reaction gas adsorbed on the target surface can be desorbed during the pulse interval, preventing the formation of an insulating layer on the target surface and solving the problem of target poisoning in traditional DC magnetron sputtering that makes sputtering unsustainable.